We are pleased to invite you to the PhD defense of Antoine Farcy on Friday 17 April 2026 at 9:30 am, Room A3, B7b Building.

His thesis "Defect-controlled charge carrier dynamics in oxide semiconductors probed by heterogeneous photocatalysis" has been realized under the joint supervision of Prof. Stéphanie Lambert and Prof. Benoît Heinrichs.

The doctoral research investigates the role of structural defects in oxide semiconductor photocatalysts such as ZnO and TiO₂. By combining spectroscopic and electronic characterization techniques, the work explores how defect states influence charge carrier recombination. In particular, a new approach based on solvent decomposition during thermal treatment is shown to generate beneficial defect states, slowing recombination and enhancing charge separation.